Title :
Antenna protection strategy for ultra-thin gate MOSFETs
Author :
Krishnan, Srikanth ; Amerasekera, A.
Author_Institution :
Silicon Technol. Dev. Center, Texas Instrum. Inc., Dallas, TX, USA
fDate :
March 31 1998-April 2 1998
Abstract :
We compare the efficacy of drain-well diodes and gated diodes as antenna protection under positive as well as negative plasma damage for gate oxides down to 21 /spl Aring/. Our results indicate that a nominal drain/substrate p-n junction (0.49 /spl mu/m/sup 2/) is capable of device protection for antennas up to 100k /spl mu/m, and can be extended down to 21 /spl Aring/ devices. We also present here novel protection schemes using (1) plasma UV exposed n-well-to-substrate diodes, and (2) a transient fuse for device protection against latent antenna damage.
Keywords :
CMOS integrated circuits; MOSFET; antennas in plasma; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; plasma applications; protection; semiconductor diodes; surface treatment; 100 mm; 21 angstrom; CMOS ICs; Si; SiO/sub 2/-Si; antenna protection; antenna protection strategy; antennas; device protection; drain-well diodes; drain/substrate p-n junction; gate oxides; gated diodes; latent antenna damage; negative plasma damage; plasma UV exposed n-well-to-substrate diodes; positive plasma damage; protection schemes; transient fuse device protection; ultra-thin gate MOSFETs; Diodes; Electrons; Etching; Lighting; MOS devices; MOSFETs; Plasma applications; Plasma devices; Protection; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670660
