DocumentCode
28316
Title
Performance Analysis of Thin-Film Crystalline Silicon-on-Glass Solar Cells
Author
Grancic, B. ; Solntsev, S. ; Zeman, M.
Author_Institution
Fac. of Math., Phys. & Inf., Comenius Univ., Bratislava, Slovakia
Volume
3
Issue
4
fYear
2013
fDate
Oct. 2013
Firstpage
1144
Lastpage
1148
Abstract
Performance limits of a heterojunction thin-film crystalline silicon on a glass solar cell (SC) in a substrate configuration were analyzed using the computer simulation program “Advanced Semiconductor Analysis” from the Delft University of Technology. The role of light trapping, due to scattering at randomly rough interfaces, on the absorption in the individual layers of the SC was investigated. The effect of the crystalline silicon absorber thickness, quality and passivation on the external parameters of the SC was evaluated. Using light trapping, the efficiency of an SC with 1- and 10-μm-thick c-Si absorber with a minority carrier lifetime of 10 -4 s and a surface recombination velocity of 10 -1m/s can achieve 13.8% and 17.8%, respectively.
Keywords
carrier lifetime; minority carriers; passivation; semiconductor heterojunctions; silicon-on-insulator; solar absorber-convertors; solar cells; surface recombination; thin film devices; Si-SiO2; advanced semiconductor analysis; computer simulation program; crystalline silicon absorber thickness; heterojunction thin-film crystalline silicon-on-glass solar cells; light trapping; minority carrier lifetime; passivation; performance analysis; rough interfaces; size 1 mum; size 10 mum; substrate configuration; surface recombination velocity; thin-film crystalline silicon-on-glass solar cells; Crystalline materials; Glass; Optical scattering; Passivation; Photovoltaic cells; Semiconductor device modeling; Silicon; Thin films; Light trapping; photovoltaic cell; semiconductor device modeling; silicon;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2013.2270344
Filename
6555839
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