DocumentCode
2831796
Title
Thermoelectric properties of semiconductor quantum wires
Author
Vedernikov, M.V. ; Uryupin, O.N. ; Ivanov, Yu.V. ; Kumzerov, Yu.A.
Author_Institution
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
355
Lastpage
358
Abstract
Experimental investigation of thermoelectric properties of Bi wires with a diameter of about 5 nm has been carried out. Chrysotile asbestos (a natural mineral) was used for a sample preparation. Its nano-sized channels were filled under pressure with melted bismuth. The measurements have shown that temperature dependences of the electrical resistance and thermopower and current-voltage characteristics of produced Bi wires differ considerably from corresponding dependences for InSb wires of the same diameter and for thicker Bi wires. The obtained results can be described by Luttinger liquid theory taking into account the electron-electron interaction in one-dimensional conductors.
Keywords
III-V semiconductors; Luttinger liquid; bismuth; indium compounds; nanowires; semiconductor quantum wires; thermoelectric power; 5 nm; Bi; Bi wires; InSb; Luttinger liquid; chrysotile asbestos; current-voltage characteristics; electrical resistance; electron-electron interaction; nano-sized channels; natural mineral; one-dimensional conductors; semiconductor quantum wires; thermoelectric properties; thermopower; Bismuth; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Minerals; Temperature dependence; Thermoelectricity; Thickness measurement; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287521
Filename
1287521
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