DocumentCode :
283189
Title :
Modelling power MOSFETs for SPICE circuit simulation; a review and discussion
Author :
Haslam, David Frank
fYear :
1988
fDate :
32252
Firstpage :
42370
Lastpage :
42378
Abstract :
Power semiconductor manufacturers are becoming increasingly aware that there is a need to have better models for their components for use with CAD analogue simulation tools such as the SPICE program developed originally by the University of California (Berkeley). This paper examines one family of devices, power MOSFETs, and describes some of the existing models which have been proposed in attempt to come to terms with the inadequacies of the ordinary SPICE 2 model for MOSFETs
fLanguage :
English
Publisher :
iet
Conference_Titel :
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
209085
Link To Document :
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