DocumentCode :
2831899
Title :
Thermoelectric figure of merit of M-sulphides (M=Fe, Co, Ni, Pd) thin films
Author :
Pascual, A. ; Ares, J.R. ; Ferrer, I.J. ; Sánchez, C.R.
Author_Institution :
Dept. de Fisica de Materiales, Univ. Autonoma de Madrid, Spain
fYear :
2003
fDate :
17-21 Aug. 2003
Firstpage :
376
Lastpage :
379
Abstract :
We have grown transition metal (Fe, Co, Ni, Pd) sulphide thin films and we have measured the electrical and transport properties during the formation of the films. Film structure was identified by XRD measurements. The thermoelectric power factor (S2σ) was determined and compared with that of known thermoelectric materials. We have also performed preliminary measurements on these thin films in order to determine the thermoelectric figure of merit (ZT). ZT values of FeS2 thin films were estimated at different temperatures and compared with those of natural single crystals. Their values were found to be low, but it is expected to get higher ZT values by controlling the film deposition parameters and doping them.
Keywords :
X-ray diffraction; cobalt compounds; iron compounds; nickel compounds; palladium compounds; semiconductor thin films; thermal conductivity; thermoelectric power; thermoelectricity; CoS2; FeS2; NiS2; PdS; XRD; electrical properties; thermoelectric figure of merit; thermoelectric power factor; transition metal sulphide thin films; transport properties; Crystalline materials; Crystals; Electric variables measurement; Iron; Performance evaluation; Reactive power; Temperature; Thermoelectricity; Transistors; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
Type :
conf
DOI :
10.1109/ICT.2003.1287526
Filename :
1287526
Link To Document :
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