Title :
Non-linear MESFET models
Author :
Jastrzebski, A.K.
Author_Institution :
Electron. Eng. Labs., Kent Univ., Canterbury, UK
Abstract :
Finds a non-linear circuit model of a MESFET, which is sufficiently accurate for microwave applications and additionally, is easy to implement in general simulation programs. In the first part of the paper, existing non-linear MESFET models are reviewed. The second part contains detailed description of the proposed empirical model, which is a combination and modification of the models discussed in the first part
Keywords :
Schottky gate field effect transistors; digital simulation; semiconductor device models; MESFET; empirical model; general simulation programs; microwave applications; nonlinear circuit model;
Conference_Titel :
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location :
London
