Parameter extraction for non-linear MESFET models

Author

Jastrzebski, A.K.

Author_Institution

Electron. Eng. Labs., Kent Univ., Canterbury, UK

fYear

1988

fDate

32252

Firstpage

42461

Lastpage

42465

Abstract

The proposed non-linear MESFET modelling method has proved to be both accurate and efficient. The method can be used for quasi-static and dispersion modelling and requires only typical S-parameter and DC measurements. The new model shows an excellent agreement with measurements for both DC-characteristics and for the small-signal S-parameters over wide range of bias conditions and frequencies. A first example of an accurate non-linear MESFET model for a dispersive device was presented

Keywords

Schottky gate field effect transistors; semiconductor device models; DC measurements; DC-characteristics; S-parameter; bias conditions; dispersion modelling; dispersive device; frequencies; nonlinear MESFET models; small-signal S-parameters;

fLanguage

English

Publisher

iet

Conference_Titel

Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

209088

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=283192