Title :
Parameter extraction and optimisation using TECAP software
Author_Institution :
Applications Project Centre, Hewlett-Packard Ltd., Pinewood, UK
Abstract :
Describes the various parameter extraction and optimisation techniques adopted using Hewlett-Packard´s Transistor Electrical Characterisation and Analysis Program (TECAP) for the Berkeley MOS, Bipolar and Gallium Arsenide Solid State Device Models. The models are discussed and some of the fundamental concepts of extraction and optimisation described. Modelling concepts, measurement techniques, parameter extraction, parameter optimisation and device simulation are covered
Keywords :
circuit CAD; optimisation; semiconductor device models; Berkeley MOS; Bipolar; Solid State Device Models; TECAP software; Transistor Electrical Characterisation and Analysis Program; device simulation; extraction; measurement techniques; optimisation techniques; parameter extraction; parameter optimisation;
Conference_Titel :
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Conference_Location :
London
