Title :
Effect of Ar plasma distribution in RF-magnetron-sputtering on crystallinity and thermoelectric properties of FeSi2 films
Author :
Kamata, K. ; Anzai, H. ; Sugita, M. ; Oikawa, Y. ; Ozaki, H.
Author_Institution :
Dept. of Electr. Eng. & Bioscience, Waseda Univ., Tokyo, Japan
Abstract :
Thermoelectric properties of FeSi2+x prepared by RF magnetron sputtering were studied in the temperature range 470K-820K. Ar plasma distribution and the composition ratio Si/Fe were changed to investigate the condition, which yields high thermoelectric properties. It was found that the crystallinity and the thermoelectric properties improved remarkably by a higher in-plane component of magnetic field on the target surface. It was also found that the composition ratio Si/Fe≃2.2 in the film yielded the best thermoelectric properties and it corresponded to the best crystallinity of single β-FeSi2 phase.
Keywords :
X-ray diffraction; electrical resistivity; iron compounds; plasma density; semiconductor thin films; sputtered coatings; thermoelectricity; 470 to 820 K; Ar plasma distribution; FeSi2+x; FeSi2 films; RF-magnetron-sputtering; composition ratio; crystallinity; high thermoelectric properties; thermoelectric properties; Argon; Crystallization; Iron; Magnetic properties; Plasma properties; Plasma temperature; Radio frequency; Sputtering; Temperature distribution; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
DOI :
10.1109/ICT.2003.1287530
