Title :
The total dose response of NPN transistors with different package types to various irradiation conditions
Author_Institution :
R. Mil. Coll. of Sci., Cranfield, UK
Abstract :
Devices with two different geometries were made from single wafers, in four different packages. The effects of temperature, shielding and dose rate during irradiation were also studied, for total doses of 25 to 200 Gy
Keywords :
bipolar transistors; passivation; radiation effects; semiconductor device packaging; shielding; 25 to 200 Gy; NPN transistors; device geometries; dose rate; irradiation conditions; package types; shielding effects; temperature effects; total dose response; Degradation; Educational institutions; Geometry; Manufacturing processes; Noise measurement; Packaging; Passivation; Silicon; Temperature measurement; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1996., IEEE
Conference_Location :
Indian Wells, CA
Print_ISBN :
0-7803-3398-5
DOI :
10.1109/REDW.1996.574187
