Title :
Total dose radiation hard 0.5 μm SOI CMOS transistors and 256 K SRAMs
Author :
Liu, S.T. ; Jenkins, W.C.
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Abstract :
The first 2 Mrad(SiO2) total dose hard 0.5 μm CMOS SOI 256 K SRAM fabricated in SIMOX has been demonstrated. The address access time varied from 15 ns at 3.6 V to 19 ns at 3.0 V. The address access time was nearly independent of temperature from -55°C to 125°C and independent of radiation to 2×106 rad(SiO 2) for a given Vdd. The standby current was 0.5 mA at 2×106 rad(SiO2) which was much better than the specified 1.5 mA
Keywords :
CMOS memory circuits; MOSFET; SIMOX; SRAM chips; radiation effects; radiation hardening (electronics); -55 to 125 C; 0.5 mA; 0.5 micron; 15 to 19 ns; 256 Kbit; 3 to 3.6 V; SIMOX; SOI CMOS transistors; Si; address access time; static RAM; total dose radiation hard CMOSFETs; total dose radiation hard SRAM; CMOS process; CMOS technology; Doping; Electrons; Hafnium; Isolation technology; MOSFET circuits; Random access memory; Semiconductor device measurement; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1996., IEEE
Conference_Location :
Indian Wells, CA
Print_ISBN :
0-7803-3398-5
DOI :
10.1109/REDW.1996.574190
