Title :
GaAs FET physical modeling and optimization
Author :
Mokari, M.E. ; Olbers, R.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA
Abstract :
The authors present a modified version of the PHYSGEN model developed by M.A. Khatibzadeh and R.J. Trew (see IEEE Trans. Microwave Theory Tech., vol.36, p.231-238, Feb. 1988). The authors introduce three new parameters into the Khatibzadeh-Trew model. The revised model also includes the effect of the parasitic resistances on the DC characteristics. The modified model accounts for the small signal behavior of actual devices. This improved model is then incorporated into an optimization routine to allow the designer to obtain a better match to measured data
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; optimisation; semiconductor device models; solid-state microwave devices; DC characteristics; GaAs; Khatibzadeh-Trew model; MESFET; PHYSGEN model; optimization; parasitic resistances; physical modeling; small signal behavior; Boundary conditions; Electrons; Equations; Equivalent circuits; FETs; Gallium arsenide; Leakage current; Length measurement; Thickness measurement; Voltage;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176720
