DocumentCode
2832856
Title
Study of emitter structures for InSb thermal diodes
Author
Kucherov, Yan ; Hagelstein, Peter ; Sevastyanenko, Victor ; Brown, Harold L.
Author_Institution
ENECO, Inc, Salt Lake City, UT, USA
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
578
Lastpage
581
Abstract
We reported earlier that introduction of potential barrier structures into emitter and collector regions of a thermoelectric material plate (thermal diode) greatly enhances effective figure of merit. Up to eight times increase was observed with corresponding efficiencies up to 40% of ideal Carnot cycle or an effective ZT of 3.2. Absolute efficiencies up to 18% were observed. Here we report a systematic study of emitter parameters that influence InSb thermal diode performance.
Keywords
III-V semiconductors; indium compounds; semiconductor diodes; thermoelectric devices; InSb; InSb thermal diodes; collector regions; emitter regions; emitter structures; ideal Carnot cycle; potential barrier structures; thermal diode; thermoelectric material plate; Circuits; Current measurement; Impurities; Ion implantation; Ionization; Semiconductor diodes; Tellurium; Temperature distribution; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287579
Filename
1287579
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