DocumentCode
2833459
Title
GaAs device modelling for design and application
Author
Parker, Anthony E. ; Skellern, David J.
Author_Institution
Macquarie Univ., Sydney, NSW, Australia
fYear
1991
fDate
11-14 Jun 1991
Firstpage
1837
Abstract
Device characteristics included in available MESFET models are reviewed, and model extensions for improved accuracy over a wide range of conditions are proposed. Use of the model is illustrated in the context of a basic analog amplifier and analog sub-circuit. The application of other modeling techniques for mixed-mode (analog and digital) systems is briefly discussed
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; MESFET models; mixed mode systems; model extensions; Circuit simulation; Equations; Frequency; Gallium arsenide; Hafnium; JFET circuits; MESFET circuits; Predictive models; SPICE; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN
0-7803-0050-5
Type
conf
DOI
10.1109/ISCAS.1991.176763
Filename
176763
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