Title :
Design issues in GaAs oversampled A/D converters
Author :
Asibal, R.L. ; Allen, P.E.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Considerations involved in the design of a sigma-delta modulator (EΔM) implemented in GaAs technology are presented. Issues such as suitable architectures, modeling of modulator imperfections, and the limitations of some of GaAs unique characteristics in the design of the modulator are discussed. From the simulation, it is seen that the required linearity of the first integrator is quite stringent but most other circuit imperfections have only minor influence on the performance of the ΣΔM A/D converter. For this reason, a differential architecture is a good choice. An important component in the design of GaAs ΣΔM A/D converter is a fully differential op amp
Keywords :
III-V semiconductors; analogue-digital conversion; delta modulation; field effect integrated circuits; gallium arsenide; modulators; ADC; GaAs; differential architecture; fully differential op amp; integrator; modeling; modulator imperfections; oversampled A/D converters; sigma-delta modulator; CMOS technology; Circuits; Clocks; Delta-sigma modulation; Frequency conversion; Gallium arsenide; Noise shaping; Sampling methods; Silicon; Voltage;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176764
