Title :
Drift reliability optimization in VLSI circuit design
Author :
Styblinski, M.A. ; Huang, Min
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
A generalized formulation of drift reliability optimization, is presented. It is shown that the new generalized formulation is not only reasonable, but it can easily be implemented in the existing circuit optimization environment. An example of the VLSI circuit design is presented, in which the degradation due to hot electron effects is considered, and a significant increase of the circuit lifetime is achieved
Keywords :
VLSI; circuit reliability; hot carriers; optimisation; circuit lifetime; degradation; drift reliability optimization; hot electron effects; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Degradation; Design optimization; Electrons; Failure analysis; Life estimation; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176797
