DocumentCode
2833972
Title
Drift reliability optimization in VLSI circuit design
Author
Styblinski, M.A. ; Huang, Min
Author_Institution
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fYear
1991
fDate
11-14 Jun 1991
Firstpage
1976
Abstract
A generalized formulation of drift reliability optimization, is presented. It is shown that the new generalized formulation is not only reasonable, but it can easily be implemented in the existing circuit optimization environment. An example of the VLSI circuit design is presented, in which the degradation due to hot electron effects is considered, and a significant increase of the circuit lifetime is achieved
Keywords
VLSI; circuit reliability; hot carriers; optimisation; circuit lifetime; degradation; drift reliability optimization; hot electron effects; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Degradation; Design optimization; Electrons; Failure analysis; Life estimation; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN
0-7803-0050-5
Type
conf
DOI
10.1109/ISCAS.1991.176797
Filename
176797
Link To Document