DocumentCode :
2834168
Title :
The effect of hole current on the recovery characteristics of semi-insulating GaAs photoconductive opening switches
Author :
Petr, R. ; Collins, J. ; Schaefer, R.
Author_Institution :
W.J. Schafer Associates
fYear :
1989
fDate :
1989
Firstpage :
869
Lastpage :
871
Keywords :
Circuit testing; Contacts; Current density; Density measurement; Gallium arsenide; Gunn devices; Optical modulation; Photoconductivity; Power semiconductor switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1989. 7th
Type :
conf
DOI :
10.1109/PPC.1989.767626
Filename :
767626
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2834168
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