Title :
Gain-bandwidth product considerations for superlattice and multiquantum well avalanche photodiodes
Author :
Fyath, R.S. ; O´Reilly, J.J.
Author_Institution :
Sch. of Electron. Eng. Sci., Wales Univ., Bangor, UK
Abstract :
The frequency response characterization of superlattice avalanche photodiodes (SAPDs) and the effect on the performance of multigigabit-per-second lightwave receivers is investigated. The results show that these advanced detectors should be fabricated with a short avalanche region (<1 μm) and low residual hole ionization (k<0.1) to ensure negligible penalty for high bit rate operation for 1 to 20 Gbit/s
Keywords :
avalanche photodiodes; optical communication equipment; semiconductor device models; semiconductor quantum wells; semiconductor superlattices; 1 to 20 Gbit/s; APD; frequency response characterization; gain-bandwidth product; high bit rate operation; low residual hole ionization; model; multigigabit-per-second lightwave receivers; multiquantum well avalanche photodiodes; performance; short avalanche region; superlattice avalanche photodiodes;
Conference_Titel :
Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
Conference_Location :
London
