DocumentCode
283507
Title
Gain-bandwidth product considerations for superlattice and multiquantum well avalanche photodiodes
Author
Fyath, R.S. ; O´Reilly, J.J.
Author_Institution
Sch. of Electron. Eng. Sci., Wales Univ., Bangor, UK
fYear
1988
fDate
32443
Firstpage
42675
Lastpage
42678
Abstract
The frequency response characterization of superlattice avalanche photodiodes (SAPDs) and the effect on the performance of multigigabit-per-second lightwave receivers is investigated. The results show that these advanced detectors should be fabricated with a short avalanche region (<1 μm) and low residual hole ionization (k<0.1) to ensure negligible penalty for high bit rate operation for 1 to 20 Gbit/s
Keywords
avalanche photodiodes; optical communication equipment; semiconductor device models; semiconductor quantum wells; semiconductor superlattices; 1 to 20 Gbit/s; APD; frequency response characterization; gain-bandwidth product; high bit rate operation; low residual hole ionization; model; multigigabit-per-second lightwave receivers; multiquantum well avalanche photodiodes; performance; short avalanche region; superlattice avalanche photodiodes;
fLanguage
English
Publisher
iet
Conference_Titel
Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209523
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