Title :
Time-resolved photoluminescence measurements on Ga0.47In 0.53As/InP multiple quantum well structures
Author :
Bryce, A.C. ; Marsh, J.H. ; Dickson, G. ; Claxton, P.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The third order nonlinearity at the exciton peak wavelength in GaAs/AlGaAs multiple quantum well material can be used to switch the optical output between two guides. This effect depends on the generation of carriers in the wells and, therefore, the switching time will be limited by the lifetime of these carriers. This lifetime can be measured by investigating the time dependence of the photoluminescence of the semiconductor. A photoluminescence phase shift method was used to measure carrier lifetimes. The system can be used to a wavelength of 1.65 μm and also has 100 ps time resolution. The material investigated was Ga0.47In0.53As/InP multiple quantum wells grown by molecular beam epitaxy. The free carrier lifetime in an MBE grown Ga0.47In0.53As/InP MQW structure has been measured and was found to be 4 ns
Keywords :
III-V semiconductors; carrier lifetime; electro-optical devices; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; 1.65 micron; 4 ns; Ga0.47In0.53As-InP; MBE grown; MQW structure; free carrier lifetime; molecular beam epitaxy; multiple quantum well structures; photoluminescence phase shift method; switching time; time resolved photoluminescence measurements;
Conference_Titel :
Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
Conference_Location :
London
