• DocumentCode
    283511
  • Title

    Time-resolved photoluminescence measurements on Ga0.47In 0.53As/InP multiple quantum well structures

  • Author

    Bryce, A.C. ; Marsh, J.H. ; Dickson, G. ; Claxton, P.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • fYear
    1988
  • fDate
    32443
  • Abstract
    The third order nonlinearity at the exciton peak wavelength in GaAs/AlGaAs multiple quantum well material can be used to switch the optical output between two guides. This effect depends on the generation of carriers in the wells and, therefore, the switching time will be limited by the lifetime of these carriers. This lifetime can be measured by investigating the time dependence of the photoluminescence of the semiconductor. A photoluminescence phase shift method was used to measure carrier lifetimes. The system can be used to a wavelength of 1.65 μm and also has 100 ps time resolution. The material investigated was Ga0.47In0.53As/InP multiple quantum wells grown by molecular beam epitaxy. The free carrier lifetime in an MBE grown Ga0.47In0.53As/InP MQW structure has been measured and was found to be 4 ns
  • Keywords
    III-V semiconductors; carrier lifetime; electro-optical devices; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; 1.65 micron; 4 ns; Ga0.47In0.53As-InP; MBE grown; MQW structure; free carrier lifetime; molecular beam epitaxy; multiple quantum well structures; photoluminescence phase shift method; switching time; time resolved photoluminescence measurements;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Heterojunction and Quantym Well Devices: Physics, Engineering and Applications, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=283511