Title :
Subthreshold leakage current: challenges and solutions
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
As technology scales deeper into the nanometer regime, leakage Power is one of the main obstacles to Moore´s law. This paper provides an overview of leakage current highlighting its major mechanisms. Subthreshold leakage current becomes the major focus of this paper, outlining how it is impacted by technology scaling. The major techniques used to manage leakage current in industry are then addressed.
Keywords :
CMOS integrated circuits; MOSFET; leakage currents; scaling circuits; MOS; Moores law; leakage power; scaling; subthreshold leakage current; CMOS technology; Leakage current; Logic; Microelectronics; Moore´s Law; Power engineering and energy; Power engineering computing; Sprites (computer); Subthreshold current; Workstations;
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
DOI :
10.1109/ICM.2003.1287726