DocumentCode :
2835307
Title :
Subthreshold leakage current: challenges and solutions
Author :
Anis, Mohab
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear :
2003
fDate :
9-11 Dec. 2003
Firstpage :
77
Lastpage :
80
Abstract :
As technology scales deeper into the nanometer regime, leakage Power is one of the main obstacles to Moore´s law. This paper provides an overview of leakage current highlighting its major mechanisms. Subthreshold leakage current becomes the major focus of this paper, outlining how it is impacted by technology scaling. The major techniques used to manage leakage current in industry are then addressed.
Keywords :
CMOS integrated circuits; MOSFET; leakage currents; scaling circuits; MOS; Moores law; leakage power; scaling; subthreshold leakage current; CMOS technology; Leakage current; Logic; Microelectronics; Moore´s Law; Power engineering and energy; Power engineering computing; Sprites (computer); Subthreshold current; Workstations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
Type :
conf
DOI :
10.1109/ICM.2003.1287726
Filename :
1287726
Link To Document :
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