DocumentCode
2835735
Title
A process variation detection method
Author
Melikyan, Vazgen ; Mirzoyan, Davit ; Petrosyan, Gor
fYear
2010
fDate
17-20 Sept. 2010
Firstpage
30
Lastpage
33
Abstract
A new simple and versatile PV detection method is proposed that allows detecting MOS transistor´s parameters variation. Theoretical analysis and simulation results for threshold voltage, mobility, oxide thickness prove the performance of the circuit (with the basic method). The use of only MOS transistors and the lack of reference sources allow obtaining small area and high detection accuracy.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; CMOS integrated circuits; MOS transistor parameter variation; PV detection method; mobility simulation; oxide thickness; process variation detection method; threshold voltage analysis; Accuracy; Integrated circuits; MOSFETs; Mirrors; Threshold voltage; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Design & Test Symposium (EWDTS), 2010 East-West
Conference_Location
St. Petersburg
Print_ISBN
978-1-4244-9555-9
Type
conf
DOI
10.1109/EWDTS.2010.5742131
Filename
5742131
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