Title :
A process variation detection method
Author :
Melikyan, Vazgen ; Mirzoyan, Davit ; Petrosyan, Gor
Abstract :
A new simple and versatile PV detection method is proposed that allows detecting MOS transistor´s parameters variation. Theoretical analysis and simulation results for threshold voltage, mobility, oxide thickness prove the performance of the circuit (with the basic method). The use of only MOS transistors and the lack of reference sources allow obtaining small area and high detection accuracy.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; CMOS integrated circuits; MOS transistor parameter variation; PV detection method; mobility simulation; oxide thickness; process variation detection method; threshold voltage analysis; Accuracy; Integrated circuits; MOSFETs; Mirrors; Threshold voltage; Transfer functions;
Conference_Titel :
Design & Test Symposium (EWDTS), 2010 East-West
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4244-9555-9
DOI :
10.1109/EWDTS.2010.5742131
