Broadband microwave GaAs monolithic switches

The authors describe the design, fabrication and performance of high isolation broadband MMIC switches based on MESFET and PIN diode devices. The PIN based MMIC rivals state of the art hybrid switches which require tuning. These monolithic units are easily inserted into existing applications with advantages of size, speed, reliability and cost without any performance degradation. The FET monolithic functions well from DC through Ku band with slightly higher insertion loss than its PIN counter part but with the advantage of a simple lower power driver