Title :
40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier
Author :
Bradley, J.D.B. ; Gay, M. ; Simon, J.C. ; Wörhoff, K. ; Pollnau, M.
Author_Institution :
Integrated Opt. Microsyst. Group, Univ. of Twente, Enschede, Netherlands
Abstract :
Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III-V materials and are limited in their capacity to amplify WDM signals (< 20 Gbit/s per channel) due to transient carrier effects, EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their all-optical operation and long excited-state lifetime mean that amplification at high data rates is feasible. This paper presents results of amplification of a 40-Gbit/s optical signal using an EDWA. Typical eye diagrams with and without the EDWA and lensed fibers are presented. In both cases the eye pattern is open and no significant distortion can be observed with the EDWA included in the transmission setup. No difference in internal net gain was observed for the 40-Gbit/s encoded signal and a continuous-wave signal. Compared to the reference signal, without EDWA and lensed fibers, for a pump power of 220 mW and a signal power of -0.5 dBm coupled into the device, only a small power penalty of approximately 1 dB is observed.
Keywords :
aluminium compounds; erbium; integrated optics; optical communication equipment; optical fibres; ridge waveguides; Al2O3:Er; BER; bit error rate; bit rate 40 Gbit/s; data transmission; erbium-doped waveguide amplifiers; integrated optical amplifier; power 220 mW; Circuits; Erbium-doped fiber amplifier; III-V semiconductor materials; Optical amplifiers; Optical distortion; Optical materials; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5194739