Title :
Low Vπ high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure
Author :
Lu, Qiaoyin ; Guo, Weihua ; Byrne, Diarmuid ; Donegan, John F.
Author_Institution :
Semicond. Photonics Group, Trinity Coll. Dublin, Dublin, Ireland
Abstract :
In this paper, we report a new design for GaAs modulators based on an n-i-p-n structure. The travelling-wave coplanar waveguide (CPW) electrodes are employed to realize high speed operation. By optimization, an electrical 3-dB bandwidth of nearly 40 GHz (optical 3-dB bandwidth of 80GHz) and a Vpi around 6.6 V are predicted for a 5 mm long phase modulator.
Keywords :
III-V semiconductors; coplanar waveguides; electro-optical modulation; high-speed optical techniques; optimisation; GaAs; electrooptic phase modulators; high speed operation; n-i-p-n structure; optimization; travelling-wave coplanar waveguide; Bandwidth; Coplanar waveguides; Electrodes; Gallium arsenide; High speed optical techniques; Optical losses; Optical modulation; Optical sensors; Optical waveguides; Phase modulation;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5194744
