Selective-area MOCVD growth for novel 1.3 μm DFB laser diodes with graded grating

Author

Takiguchi, T. ; Watanabe, H. ; Shibata, K. ; Takagi, K. ; Minami, H. ; Takemoto, A. ; Mihashi, Y. ; Higuchi, H.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

481

Lastpage

484

Abstract

We demonstrate a new approach to realize the graded grating, which is effective to improve the modulation characteristics of DFB laser diodes (LDs) for analog optical transmission, by using selective-area-growth (SAG) technique. Ideal parabolic thickness profile and the thickness enhancement ratio as high as 4.6 in the grating layer have been realized by optimizing the mask shape using the simulation technique for SAG. We have also successfully realized the high light-current linearity in 1.3 μm DFB-LDs with graded grating for the first time. It has been shown that the LDs have excellent distortion characteristics

Keywords

III-V semiconductors; MOCVD; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; masks; optical fabrication; quantum well lasers; semiconductor growth; 1.3 micron; DFB laser diodes; InGaAsP-InP; MQW structure; analog optical transmission; distortion characteristics; graded grating; growth simulation; high light-current linearity; ideal parabolic thickness profile; improved modulation characteristics; mask shape; photoluminescence; selective-area MOCVD growth; thickness enhancement ratio; Dielectric substrates; Diode lasers; Fiber lasers; Gratings; Linearity; MOCVD; Optical devices; Optical distortion; Optical modulation; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712560

Filename

712560