Improvement of hetero-interface abruptness in MOVPE growth of InGaAs/InP quantum wells by in-situ kinetic ellipsometry

Author

Sudo, Shinya ; Nakano, Yoshiaki ; Sugiyama, Masakazu ; Shimogaki, Yukihiro ; Komiyama, Hiroshi ; Tada, Kunio

Author_Institution

Sch. of Eng., Tokyo Univ., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

485

Lastpage

488

Abstract

Interdiffusion of arsenic and phosphorus at InGaAs/InP interfaces causes degradation of hetero-interface abruptness. This problem limits the use of thin quantum wells (QWs) in this material system. Previously, we studied the As-P exchange process at the interface between InGaAs and InP in metal-organic vapor phase epitaxy (MOVPE) by using in-situ kinetic ellipsometry. We have studied here how the information from the in-situ kinetic ellipsometry could be utilized to optimize the growth condition and to secure the hetero-interface abruptness in InGaAs/InP QWs. As a results, we could improve hetero-interface abruptness by two different ways that the in-situ kinetic ellipsometry results suggested

Keywords

III-V semiconductors; MOCVD; chemical interdiffusion; ellipsometry; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; vapour phase epitaxial growth; As-P exchange process; InGaAs-InP; MOVPE growth; growth condition optimization; hetero-interface abruptness; in-situ kinetic ellipsometry; interdiffusion; photoluminescence peak; quantum wells; Degradation; Ellipsometry; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Kinetic theory; Molecular beam epitaxial growth; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712562

Filename

712562