HF characteristics of InP-based HFETs grown at extremely low temperatures of 300°C and below

Author

Lee, L.H. ; Kunze, M. ; Henle, B. ; Kohn, E.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

513

Lastpage

516

Abstract

Heterostructure FETs with InP channel have been fully grown and processed at low temperature by MBE. Here we show that such structures are also feasible for microwave applications. InP-based HFETs with 20 nm InAlAs Schottky layer and 50 nm InP channel layer grown below 300°C were processed and characterized at DC and RF. The devices show a maximum breakdown voltage above 10 V, f_t=19 GHz and f_max=40 GHz at 0.4 μm gate length. The highest f_t·L_G-product was 10 GHz·μm for a 1.2 μm device

Keywords

III-V semiconductors; field effect transistors; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor growth; 0.4 mum; 1.2 mum; 10 V; 19 GHz; 20 nm; 20 nm InAlAs Schottky layer; 40 GHz; 50 nm; 50 nm InP channel layer; HF characteristics; InP; InP channel; InP-based HFETs; heterostructure FETs; maximum breakdown voltage; microwave applications; Circuits; Electron devices; HEMTs; Hafnium; Indium compounds; Indium phosphide; MODFETs; Microwave devices; Schottky barriers; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712573

Filename

712573