DocumentCode
2836445
Title
Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN photodiode
Author
Iwasaki, Takashi ; Iguchi, Yasuhiro ; Sekiguchi, Takashi
Author_Institution
Optoelectron. R&D, Sumitomo Electr. Ind. Ltd., Osaka, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
517
Lastpage
520
Abstract
Crystal quality and dark current characteristics for InP/InGaAs/InP PIN Photodiode along slip dislocation of sulfur-doped InP substrate have been studied. We found for the first time that Zn is abnormally diffused on the surface of PIN-PD along slip dislocations in InP(S) substrate, which means that the PIN structure in the chip is partially destroyed
Keywords
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor heterojunctions; slip; surface diffusion; zinc; InP-InGaAs-InP:Zn; InP/InGaAs/InP PIN photodiode; Zn diffusion; crystal quality; dark current characteristics; slip dislocation; Absorption; Crystalline materials; Dark current; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Manufacturing processes; PIN photodiodes; Substrates; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712574
Filename
712574
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