Characterization and modeling of SOI varactors at various temperatures

Author

Chen, Kun-Ming ; Yeh, Wen-Kuan ; Guo-Wei Huang ; Fang, Yean-Kuch ; Yang, Fu-Liang

Author_Institution

Nat. Nano Device Lab., Hsinchu, Taiwan

fYear

2003

fDate

9-11 Dec. 2003

Firstpage

252

Lastpage

255

Abstract

SOI varactors have attracted attention for RF circuit applications due to the superior speed advantage of SOI technology. This paper presents the capacitance and the quality factor of MOS varactors in SOI CMOS process at various temperatures. The temperature coefficient of capacitance of inversion-mode device in larger than that of accumulation-mode devices in the normal operating range. Besides, the quality factor decreases with increasing temperature for these varactors. A device model based on BSIM3v3 model is proposed to simulate the temperature effect. The modeled results of the capacitance, series resistance and quality factor for SOI varactors have excellent agreement with the measured results.

Keywords

CMOS integrated circuits; MIS devices; Q-factor; capacitance; elemental semiconductors; integrated circuit modelling; silicon-on-insulator; varactors; MOS varactors; RF circuit application; SOI CMOS process; SOI varactors; Si; accumulation mode device; capacitance; inversion mode device; quality factor; series resistance; temperature coefficient; CMOS process; CMOS technology; Capacitance measurement; Circuits; Electrical resistance measurement; Q factor; Radio frequency; Semiconductor device modeling; Temperature distribution; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on

Print_ISBN

977-05-2010-1

Type

conf

DOI

10.1109/ICM.2003.1287790

Filename

1287790