Title :
Efficiency of photoluminescence up-conversion at (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P and GaAs heterointerface
Author :
Yamashita, Kenichi ; Kita, Takashi ; Nishino, Taneo ; Oestreich, Michael
Author_Institution :
Div. of Sci. & Mater., Kobe Univ., Japan
Abstract :
Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5 P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical frequency conversion; photoluminescence; semiconductor heterojunctions; (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P-GaAs; (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P/GaAs heterointerface; 11 K; 2.18 eV; carrier-localization properties; excitation-power dependence; higher energy side; lower energy side; photoexcited carriers relaxation process; photoluminescence up-conversion efficiency; slow rise; steep rise; Epitaxial growth; Gallium arsenide; Laser excitation; Laser mode locking; Metallic superlattices; Optical harmonic generation; Optical materials; Photoluminescence; Semiconductor materials; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba, Japan
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712577
