DocumentCode :
2836501
Title :
Spin-polarized excitons in long-range ordered Ga0.5In 0.5P
Author :
Kita, T. ; Bhattacharya, K. ; Yamashita, E. ; Nishino, T. ; Geng, C. ; Scholz, F. ; Schlweizer, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
525
Lastpage :
528
Abstract :
Circularly polarized excitation light produces spin-polarized excitons in long-range ordered Ga0.5In0.5P, because of a splitting at the valence-band maximum. We observed the spin relaxation process in ordered Ga0.5In0.5P under resonant excitation of heavy-hole excitons. The circularly polarized exciton luminescence shows a maximum anisotropy of about 35%. The decay profile of the depolarized luminescence is described by two components; the rapid decay by exciton-relaxation processes and the slower exciton recombination. An excitonic spin-relaxation process occurrs during the initial rapid decay
Keywords :
III-V semiconductors; excitons; gallium compounds; indium compounds; photoluminescence; valence bands; Ga0.5In0.5P; circularly polarized exciton luminescence; decay profile; depolarized luminescence; long-range ordered Ga0.5In0.5P; maximum anisotropy; rapid decay by exciton-relaxation processes; resonant excitation; slower exciton recombination; spin-polarized excitons; valence-band maximum; Anisotropic magnetoresistance; Charge carrier processes; Epitaxial growth; Excitons; Gallium arsenide; Lattices; Luminescence; Optical polarization; Optical pumping; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712578
Filename :
712578
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2836501
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