• DocumentCode
    2836516
  • Title

    Study of Raman intensity of LO phonon modes in InGaAsP quaternary alloys grown on InP

  • Author

    Sugiura, Touko ; Hase, Nobuyasu ; Iguchi, Yasuhiro ; Sawaki, Nobuhiko

  • Author_Institution
    Dept. of Electr. Eng., Toyota Coll. of Technol., Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    529
  • Lastpage
    532
  • Abstract
    The Raman intensities of optical phonon modes in InxGa 1-xAsyP1-y quaternary alloys lattice matched to InP are studied in the region of the immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted with the bond density. But the replacement of a gallium atom with an indium gives remarkable variation in the peak intensity
  • Keywords
    III-V semiconductors; Raman spectra; gallium arsenide; gallium compounds; indium compounds; phonon spectra; semiconductor thin films; InxGa1-xAsyP1-y; InGaAsP; InGaAsP quaternary alloys; InP; LO phonon modes; Raman intensity; bond density; immiscibility region; integral intensity; optical phonon modes; peak intensity; Educational institutions; Electronics industry; Gallium compounds; Indium phosphide; Optical materials; Optical mixing; Phonons; Research and development; Temperature; Toy industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712579
  • Filename
    712579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2836516