Title :
Study of Raman intensity of LO phonon modes in InGaAsP quaternary alloys grown on InP
Author :
Sugiura, Touko ; Hase, Nobuyasu ; Iguchi, Yasuhiro ; Sawaki, Nobuhiko
Author_Institution :
Dept. of Electr. Eng., Toyota Coll. of Technol., Japan
Abstract :
The Raman intensities of optical phonon modes in InxGa 1-xAsyP1-y quaternary alloys lattice matched to InP are studied in the region of the immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted with the bond density. But the replacement of a gallium atom with an indium gives remarkable variation in the peak intensity
Keywords :
III-V semiconductors; Raman spectra; gallium arsenide; gallium compounds; indium compounds; phonon spectra; semiconductor thin films; InxGa1-xAsyP1-y; InGaAsP; InGaAsP quaternary alloys; InP; LO phonon modes; Raman intensity; bond density; immiscibility region; integral intensity; optical phonon modes; peak intensity; Educational institutions; Electronics industry; Gallium compounds; Indium phosphide; Optical materials; Optical mixing; Phonons; Research and development; Temperature; Toy industry;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712579
