Title :
Theory of time-resolved Raman and fluorescence emission of semiconductor quantum dots
Author :
Kabuss, Julia ; Knorr, Andreas ; Richter, Marten
Author_Institution :
Inst. fur Theor. Phys., Tech. Univ. Berlin, Berlin, Germany
Abstract :
A theoretical analysis of the different scattering contribution during the quantum emission process in InGaAs-GaAs semiconductor quantum dots and explain their specific temporal dynamics in current experimental data was presented.The photon-coherence couples to the photon assisted polarization, which couples itself to higher order correlations including phonons. The resulting infinite hierarchy of equations is truncated using a higher order Born factorization.
Keywords :
III-V semiconductors; Raman spectra; fluorescence; gallium arsenide; indium compounds; semiconductor quantum dots; Born factorization; InGaAs-GaAs; fluorescence emission; photon-coherence couples; quantum emission process; semiconductor quantum dots; temporal dynamics; time-resolved Raman emission; Fluorescence; Frequency; Light scattering; Optical scattering; Particle scattering; Phonons; Quantum dots; Quantum mechanics; Raman scattering; Rayleigh scattering;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5194788
