DocumentCode
2836808
Title
Photoelastic measurement of chip-bonding induced strains by infrared polariscope
Author
Chu, T. ; Yamada, M.
Author_Institution
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
541
Lastpage
544
Abstract
Strain induced by bonding a GaAs chip on a copper heatsink plate has been measured with a reflection type of infrared polariscope. It is found that the bonding-induced strain reaches the order of 10-4 , which corresponds to about 1/10 of that estimated from the thermal expansion difference for the unit length between GaAs and copper when it is cooled down from the die-bonding temperature to the room temperature
Keywords
III-V semiconductors; birefringence; gallium arsenide; photoelasticity; polarimetry; strain measurement; thermal expansion; wafer bonding; Cu; GaAs; GaAs chip; chip-bonding induced strains; copper heatsink plate; die-bonding temperature; infrared polariscope; photoelastic measurement; thermal expansion; Bonding; Copper; Gallium arsenide; Infrared heating; Photoelasticity; Polarization; Reflection; Semiconductor device measurement; Strain measurement; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712597
Filename
712597
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