DocumentCode :
2837354
Title :
Handling long-term memory effects in X-parameter model
Author :
Soury, Arnaud ; Ngoya, Edouard
Author_Institution :
Agilent Technologies - EEsof Division - Massy, France
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
Since the last decade, the behavioral modeling of RF functional blocks (amplifiers, mixers, (de)modulators, etc.) has been a flourishing research domain that has led to a better overall understanding of the nonlinear dynamics impact to the circuit performances. Recently the X-parameter paradigm has been introduced. The formalism provides a comprehensive description of the relationships between all the harmonics of the scattered and incident power waves at the ports of a device, and represents a major advancement in RF circuit characterization. The formalism however still needs effective handling of the long term memory effects. In this paper, a simple and efficient approach is proposed to model long-term memory effects within X-parameter. It ensures both a simple extraction procedure and an efficient numerical implementation.
Keywords :
Computational modeling; Harmonic analysis; Integrated circuit modeling; Mathematical model; Pulse measurements; Radio frequency; Solid modeling; X-parameter; long term memory model; pulsed envelope measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6257768
Filename :
6257768
Link To Document :
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