High performance surface acoustic resonators in 1–3 GHz range using ScAlN/6H-SiC structure

Author

Hashimoto, Ken-ya ; Sato, Shuhei ; Teshigahara, Akihiko ; Nakamura, Takuya ; Kano, Kazuhiko

Author_Institution

Graduate School of Engineering, Chiba University, 1–33 Yayoi-cho, Inage-ku, 263-8522, Japan

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

This paper describes application of Sc-doped AlN (ScAlN) to wideband surface acoustic wave (SAW) devices in 1–3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN is combined with a base substrate with extremely high acoustic wave velocities such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and it is shown that SAW properties are simulated well theoretically. Finally, one-port SAW resonators are fabricated on the structure, and it is shown how high performances are achievable in 1–3 GHz range by use of the structure.

Keywords

Delay lines; Diamond-like carbon; Silicon carbide; Substrates; Surface acoustic wave devices; Surface acoustic waves; Wideband; 6H-SiC; SAW delay-lines; SAW resonators; Sc doped AlN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC, Canada

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6257776

Filename

6257776