Title :
InAsxP1-x V-groove quantum wires
Author :
Kappelt, M. ; Turck, V. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
For the first time we used the phosphorus/arsenic exchange reaction in InP V-grooves under arsine atmosphere to fabricate in-situ InAsxP1-x quantum wires by metal organic chemical vapor deposition (MOCVD) with emission at 1.163 eV. The advantage of this method is that no planarization of the groove tip occurs since no material is deposited during the exchange process. Details of As/P exchange on (001), (111)A, and (111)B surfaces and in the groove tip will be presented. Photoluminescence and spatially resolved cathodoluminescence are used to reveal the properties of the structures
Keywords :
III-V semiconductors; MOCVD coatings; cathodoluminescence; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wires; 1.163 eV; In(AsP); InAsxP1-x V-groove quantum wires; MOCVD; P-As exchange reaction; arsine atmosphere; metal organic chemical vapor deposition; photoluminescence; planarization; spatially resolved cathodoluminescence; Buffer layers; Indium compounds; Indium gallium arsenide; Indium phosphide; MOCVD; Quantum dots; Semiconductor materials; Spatial resolution; Substrates; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712690
