DocumentCode
2839505
Title
Gain spectral characteristics of GaInAsP/InP quantum-wire lasers
Author
Nakaya, Hiroyuki ; Kojima, Takashi ; Tanaka, Suguru ; Yasumoto, Hideo ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
591
Lastpage
594
Abstract
Gain spectra of 1.5 μm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm were measured and compared with that of quantum-film lasers fabricated on a same wafer. As a result, the difference of the spectral shape between the quantum-wire and the quantum-film lasers were clearly obtained at T=100 K
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wires; 1.5 mum; 100 K; 20 nm; 25 nm; GaInAsP-InP; GaInAsP/InP quantum-wire lasers; gain spectral characteristics; spectral shape; Anisotropic magnetoresistance; Gain measurement; Indium phosphide; Lithography; Optical films; Polarization; Semiconductor lasers; Threshold current; Wavelength measurement; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712691
Filename
712691
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