Title :
Fabrication of InGaAs quantum-wire field-effect transistor by selective growth in molecular beam epitaxy
Author :
Sugaya, Takeyoshi ; Takahashi, Toshimitsu ; Nakagawa, Tadashi ; Ogura, Mutsuo
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
Field effect transistor (FET) using single InGaAs quasi-quantum-wire (quasi-QWR) as a channel has been fabricated. The quasi-QWR structures with good optical property have been fabricated by selective growth using of molecular beam epitaxy on non-planar InP substrate. The width and the thickness of the quasi-QWR are 200 nm and 7 nm, respectively. The InGaAs quasi-QWR is used as a channel of the FET. The FET demonstrated the good saturation characteristics and its maximum transconductance (gm) is 105 mS/mm at the drain voltage of 0.6 V
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wires; 0.6 V; 105 mS/mm; 200 nm; 7 nm; FET; InGaAs; InGaAs quantum-wire field-effect transistor; InP; good optical properties; good saturation characteristics; maximum transconductance; molecular beam epitaxy; non-planar InP substrate; selective growth; thickness; width; Doping; Etching; FETs; Fabrication; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712692
