TiN metal gate thickness influence on fully depleted SOI MOSFETs physical and electrical properties

Author

Widiez, J. ; Vinet, M. ; Poiroux, T. ; Holliger, P. ; Previtali, B. ; Grosgeorges, P. ; Mouis, M. ; Deleonibus, S.

Author_Institution

CFA/DRT-LETI, Grenoble, France

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

30

Lastpage

31

Abstract

In this paper, we report the influence of the TiN metal gate thickness on fully depleted (FD) silicon-on-insulator (SOI) MOS transistors with SiO₂ and HfO₂ gate dielectrics. The threshold voltage as well as the electrical oxide thickness (EOT), the gate leakage current and the channel mobility are impacted. Smaller the TiN layer is, better are the transistors characteristics. This is due to a lower charge effect when the TiN thickness decreases.

Keywords

MOSFET; carrier mobility; dielectric materials; hafnium compounds; leakage currents; silicon compounds; silicon-on-insulator; titanium compounds; HfO₂; SOI MOSFET; SiO₂; TiN; channel mobility; charge effect; electrical oxide thickness; electrical properties; gate leakage current; physical properties; silicon-on-insulator; Degradation; Dielectric thin films; Dry etching; Gate leakage; Hafnium oxide; Leakage current; MOSFETs; Silicon on insulator technology; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563523

Filename

1563523