Title :
A new leakage mechanism in SOI smart power technologies
Author :
Schwantes, S. ; Heid, A. ; Dietz, F. ; Graf, M. ; Dudek, V.
Author_Institution :
ATMEL Germany, Heilbronn, Germany
Abstract :
Smart power SOI technologies are becoming popular because of better isolation. The SOI technology introduces a new electrode, the substrate electrode referred to as back gate. Several papers have reported back gate induced leakage current. This work reports a new leakage mechanism induced by the interaction of the neighbouring device and that back gate. Moreover, possible countermeasures for a 0.8 μm 80V SOI technology are presented.
Keywords :
isolation technology; leakage currents; power MOSFET; silicon-on-insulator; 0.8 micron; 80 V; SOI technology; leakage mechanism; silicon-on-insulator; smart power technologies; substrate electrode; Circuits; Current measurement; Electrodes; Electrons; Isolation technology; Leakage current; MOS devices; Stress; Tunneling; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563524
