Study of chemical reactions at metal-InP interfaces formed by sputter deposition of Pt and Ti

Author

Takeyama, Mayumi B. ; Noya, Atsushi ; Hashizume, Takumi ; Hasegawa, Hideki

Author_Institution

Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

627

Lastpage

630

Abstract

Interfacial reactions between (100) InP and thin films of Pt and Ti were studied. For the Pt/InP interface, an amorphous intermixing layer was formed during the sputter-deposition process even at room temperature. At the as-deposited Ti/InP contact, outdiffusion of In and a strong reaction between Ti and P were observed. Such a reaction process was further enhanced by rapid thermal annealing (RTA), resulting in the formation of an In/Ti-P/InP interfacial configuration

Keywords

Auger electron spectra; III-V semiconductors; X-ray diffraction; X-ray photoelectron spectra; amorphous state; chemical interdiffusion; indium compounds; platinum; rapid thermal annealing; semiconductor-metal boundaries; sputter deposition; surface chemistry; titanium; 300 K; In/Ti-P/InP interfacial configuration; InP; Pt; Pt sputter deposition; Pt/InP interface; RTA; Ti; Ti sputter deposition; Ti/InP contact; amorphous intermixing layer; chemical reactions; interfacial reactions; metal-InP interfaces; outdiffusion; rapid thermal annealing; room temperature; Chemical technology; Contacts; Etching; Indium phosphide; Rapid thermal annealing; Spectroscopy; Sputtering; Temperature; Thermal stability; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712701

Filename

712701