DocumentCode
2839695
Title
Floating body effects on the RF performance of FDSOI RF amplifiers
Author
Chen, C.L. ; Chang, R.T. ; Wyatt, P.W. ; Chen, C.K. ; Yost, D.-R. ; Knech, J.M. ; Keast, C.L.
Author_Institution
Massachusetts Inst. of Technol., Lexington, MA, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
44
Lastpage
46
Abstract
The impact of body contacts on the floating body effect of fully depleted (FD) SOI at high frequencies is studied. It is found that the floating body effect is negligibly small for FDSOI FETs and the body contact (BC) increased parasitic capacitance and degraded the performance. We show that the linearity of an X-band amplifier, fabricated with a 180-nm FDSOI technology, is unchanged by the BC in continuous wave and pulse mode operations.
Keywords
field effect transistors; microwave amplifiers; nanoelectronics; silicon-on-insulator; 180 nm; FDSOI amplifiers; FDSOI field effect transistor; RF amplifiers; X-band amplifier; body contact; continuous wave operation; floating body effects; parasitic capacitance; pulse mode operation; Degradation; FETs; Immune system; Linearity; MOSFET circuits; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563528
Filename
1563528
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