Title :
Electrical characterization of CdS passivation on InP
Author :
He, L. ; Dauplaise, H. ; Davis, A. ; Martin, E. ; Spaziani, S. ; Vaccaro, K. ; Waters, W. ; Lorenzo, J.P.
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
InP surface passivation has been realized by a convenient chemical bath deposition (CBD) of a thin CdS layer. For comparison, samples without any treatment and with only a thin SiO2 layer were also prepared. Also studied was the effect of a thin layer of SiO2 deposited immediately after the CdS deposition. Schottky contacts were made on the CdS-passivated InP by electron-beam deposition of Ti/Au. Electrical characterization was conducted by current-voltage (I-V) measurements. It was found that the electrical performance of the Schottky contacts of the CdS-passivated samples was improved significantly. The thickness (deposition time) of the CdS strongly affects the device electrical performance. The additional SiO2-on-CdS layer plays a key role in the process of InP surface passivation. Post-treatment in the CdS deposition process also significantly improves the surface morphology and electrical properties
Keywords :
III-V semiconductors; Schottky barriers; cadmium compounds; indium compounds; passivation; semiconductor-metal boundaries; surface structure; Au; CdS; CdS passivation; InP; Schottky contacts; SiO2; SiO2-on-CdS layer; Ti; chemical bath deposition; current-voltage measurements; deposition time; electrical characterization; electrical performance; electrical properties; electron-beam deposition; surface morphology; surface passivation; thin SiO2 layer; Current measurement; Indium phosphide; Optical fiber communication; Optical fiber losses; Optical fibers; Optical surface waves; Optoelectronic devices; Passivation; Schottky barriers; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712702
