Electrical characterization of CdS passivation on InP

Author

He, L. ; Dauplaise, H. ; Davis, A. ; Martin, E. ; Spaziani, S. ; Vaccaro, K. ; Waters, W. ; Lorenzo, J.P.

Author_Institution

Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA

fYear

1998

fDate

11-15 May 1998

Firstpage

631

Lastpage

634

Abstract

InP surface passivation has been realized by a convenient chemical bath deposition (CBD) of a thin CdS layer. For comparison, samples without any treatment and with only a thin SiO₂ layer were also prepared. Also studied was the effect of a thin layer of SiO₂ deposited immediately after the CdS deposition. Schottky contacts were made on the CdS-passivated InP by electron-beam deposition of Ti/Au. Electrical characterization was conducted by current-voltage (I-V) measurements. It was found that the electrical performance of the Schottky contacts of the CdS-passivated samples was improved significantly. The thickness (deposition time) of the CdS strongly affects the device electrical performance. The additional SiO₂-on-CdS layer plays a key role in the process of InP surface passivation. Post-treatment in the CdS deposition process also significantly improves the surface morphology and electrical properties

Keywords

III-V semiconductors; Schottky barriers; cadmium compounds; indium compounds; passivation; semiconductor-metal boundaries; surface structure; Au; CdS; CdS passivation; InP; Schottky contacts; SiO₂; SiO₂-on-CdS layer; Ti; chemical bath deposition; current-voltage measurements; deposition time; electrical characterization; electrical performance; electrical properties; electron-beam deposition; surface morphology; surface passivation; thin SiO₂ layer; Current measurement; Indium phosphide; Optical fiber communication; Optical fiber losses; Optical fibers; Optical surface waves; Optoelectronic devices; Passivation; Schottky barriers; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712702

Filename

712702