State of the art integrated millimeter wave passive components and circuits in advanced thin SOI CMOS technology on high resistivity substrate

In this paper, a comparison between transmission line (TL) integrated in high resistivity (HR) silicon on insulator technology (SOI), standard CMOS and InP technologies is made. State of the art performances are reported on HR SOI with loss propagation of about 0.4 dB/mm@40 GHz and < 1 dB/mm@100 GHz. These results demonstrate that using HR SOI wafer suppressed substrate losses (like for III-V technology). In addition, model has been developed for the described TL. To illustrate these results two microwave passive circuits, a 80 GHz coupler and a 80-100 GHz band-pass filter with both 2.5dB insertion losses (for the HR SOI version) have been realized in standard bulk CMOS and HR SOI technologies for comparison and modelization purpose.