Electrical characterization of ultra-thin SOI films: comparison of the pseudo-MOSFET and Hg-FET techniques

Author

Allibert, F. ; Bresson, N. ; Bellatreche, K. ; Maunand-Tussot ; Cristoloveanu, S.

Author_Institution

Soitec S.A., Crolles, France

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

59

Lastpage

60

Abstract

As the MOSFETs dimensions are scaled down, following the ITRS roadmap, the need for SOI wafers with ultra-thin Si films (UTF) becomes acute. Characterization of these wafers with simple, process-independent, and fast turnaround methods is very important. In this paper, we present for the first time 3 key aspects: (i) properties of UTF down to 10 nm thickness; (ii) comparison of thinning techniques (sacrificial oxidation vs. SCI); and (iii) comparison of pseudo-MOSFET and Hg-FET methods for UTF.

Keywords

MOSFET; carrier mobility; elemental semiconductors; semiconductor thin films; silicon; silicon-on-insulator; 10 nm; Hg-FET technique; Si; pseudo-MOSFET technique; sacrificial oxidation; silicon-on-insulator; thinning techniques; ultra thin SOI films; CMOS digital integrated circuits; CMOS technology; Fluctuations; Laboratories; MOSFET circuits; Pulse measurements; Random access memory; Semiconductor films; Semiconductor process modeling; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563532

Filename

1563532