DocumentCode
2839790
Title
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells
Author
Samsudin, K. ; Cheng, B. ; Brown, A.R. ; Roy, S. ; Asenov, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
61
Lastpage
62
Abstract
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has been developed. The impact of discrete random dopants in the source and drain regions on 6T SRAM cells has been investigated for well scaled ultra thin body (UTB) SOI MOSFETs with physical channel length in the range of 10nm to 5nm.
Keywords
CMOS memory circuits; MOSFET; SRAM chips; circuit simulation; semiconductor device models; silicon-on-insulator; 10 to 5 nm; 6T SRAM cells; CMOS scaling; intrinsic parameter fluctuation; random dopant induced fluctuations; statistical circuit simulation framework; ultra thin body SOI MOSFET; Circuit simulation; Doping; Fluctuations; Libraries; MOSFETs; Nanoscale devices; Random access memory; Semiconductor device modeling; Semiconductor process modeling; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563533
Filename
1563533
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