DocumentCode
2839793
Title
Broadband noise model for InP/InGaAs HBTs
Author
Huber, A. ; Bergamasch, C. ; Morf, T. ; Jackel, H.
Author_Institution
Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland
fYear
1998
fDate
11-15 May 1998
Firstpage
647
Lastpage
650
Abstract
A complete low-frequency (0.2 Hz to 500 kHz) and high-frequency (2 to 26 GHz) noise characterization as a function of emitter-geometry, temperature and bias-point of InP/InGaAs HBTs was carried out. The measured noise characteristics are validated by an equivalent circuit model with associated noise sources at different device temperatures, demonstrating an excellent agreement with the measurements
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device noise; 0.2 Hz to 500 kHz; 2 to 26 GHz; InP-InGaAs; InP/InGaAs HBTs; bias-point; broadband noise model; emitter-geometry; equivalent circuit model; high-frequency; low-frequency; measured noise characteristics; noise characterization; Circuit noise; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712706
Filename
712706
Link To Document