• DocumentCode
    2839807
  • Title

    Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements

  • Author

    Lederer, D. ; Rozeau, O. ; Raskin, J.P.

  • Author_Institution
    Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (Rbe) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.
  • Keywords
    MOSFET; electric resistance measurement; semiconductor device measurement; semiconductor device models; silicon-on-insulator; 3-port RF measurements; BSIMSOI; DT MOSFET measurements; body capacitances; body resistance; partially depleted SOI MOSFET; Fingers; Immune system; Laboratories; MOSFETs; Microwave devices; Parasitic capacitance; Radio frequency; Threshold voltage; Transconductance; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563535
  • Filename
    1563535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2839807