Unusual gate current transient behavior in SOI MOSFETs

We report unusual gate current variations with gate bias and time in accumulation regime. Measurements and simulations show the importance of the time-dependent floating body potential in both partially and fully depleted SOI MOSFETs. These variations during front-gate voltage scan and the resulting transient gate current are discussed as a combination of several mechanisms such as capacitive coupling, SRH generation, band-to-band tunneling and impact ionization. The gate current behavior is important for EEPROMs and depends on the device geometry and operating conditions.